| PART |
Description |
Maker |
| CGD1042HI |
1 GHz, 22 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| PE15A1010 |
40 dB Gain, 0.9 dB NF, 14 dBm, 2 GHz to 6 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
| CGD1046HI |
1 GHz, 27 dB gain GaAs high output power doubler 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
|
| TGA3503-SM-15 |
2-30 GHz GaAs Wideband Gain Block
|
TriQuint Semiconductor
|
| CGY1049 |
1 GHz, 29 dB gain GaAs push-pull amplifier
|
NXP Semiconductors
|
| CGD982LC |
1 GHz, 23 dB gain GaAs low current power doubler
|
NXP Semiconductors
|
| HMC694 |
GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6 - 17 GHz
|
Hittite Microwave Corporation
|
| BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
|
Siemens Semiconductor Group
|
| HMC313 |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
|
Hittite Microwave Corporation
|
| 313E HMC313 HMC313E HMC31309 |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6 GHz
|
Hittite Microwave Corporation
|
| HMMC-3022 |
DC-12 GHz High Efficiency GaAs HBT MMIC Divide-by-2 Prescaler(DC-12 GHz 高效砷化镓HBT单片微波集成电路定标
DC-12 GHz High Efficiency GaAs HBT MMIC Divide-by-2 Prescaler(DC-12 GHz 高效砷化镓HBT单片微波集成电路2定标
|
Agilent(Hewlett-Packard)
|
